simple drive requirement small package outline surface mount device g d s 30v p-channel enhancement-mode mosfet features advanced trench process technology high density cell design for ultra low on-resistance v ds = -30v r ds(on) , v gs @-10v, i ds @-5.3a = 70m ? r ds(on) , v gs @-4.5v, i ds @-4.2a = 100m ? improved shoot-through fom maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 continuous drain current i d -5.3 a pulsed drain current 1) i dm -20 maximum power dissipation ta = 25 o c p d 1.4 w ta = 75 o c 0.8 operating junction and storage temperature range t j , t stg -55 to 150 o c junction-to-case thermal resistance r jc 50 o c/w junction-to-ambient thermal resistance (pcb mounted) 2) r ja 90 note: 1. repetitive rating: pulse width limited by the maximum junction temperature 2. 1-in 2 2oz cu pcb board 3. guaranteed by design; not subject to production testing device shipping p94 marking 3000/tape&reel SE9435LT1 ordering information 1 2 3 2012-10 willas electronic corp. se9435l t1 sot-23
electrical characteristics parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d -30 = -250ua v drain-source on-state resistance r ds(on) v gs d 70.0 = -4.5v, i = -4.2a 100.0 m drain-source on-state resistance r ds(on) v gs d 50.0 = -10v, i = -5.3a 70.0 gate threshold voltage v gs(th) v ds =v gs , i d -1 = -250ua -1.7 -3 v zero gate voltage drain current i dss v ds 1 = -24v, v gs = 0v ua gate body leakage i gss v gs 100 = 20v, v ds = 0v na forward transconductance g fs v ds d 10 = -10v, i = -5.3a s dynamic 3) total gate charge q g v ds =-15v, i d = -5.3a v gs = -10v 28 nc gate-source charge q gs 3 gate-drain charge q gd 7 turn-on delay time t d(on) v dd = -15v, r l = 15 ? i d = -1a, v gen = -10v r g = 6 9 ns turn-on rise time t r 15 turn-off delay time t d(off) 75 turn-off fall time t f 40 input capacitance c iss v ds = -15v, v gs = 0v f = 1.0 mhz 745 pf output capacitance c oss 440 reverse transfer capacitance c rss 120 source-drain diode max. diode forward current i s -2.6 a diode forward voltage v sd i s -1.3 = -2.6a, v gs = 0v v note :pulse test: pulse width <= 300us, duty cycle<= 2% 2012-10 willas electronic corp. 30v p-channel enhancement-mode mosfet se9435l t1
typical electrical characteristics 2012-10 willas electronic corp. 30v p-channel enhancement-mode mosfet se9435l t1
sot - 23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-10 willas electronic corp. 30v p-channel enhancement-mode mosfet se9435l t1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .086(2. 1 0) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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